The goal of project C1 is to develop innovative materials and concepts for memristive devices and their integration into neuromorphic systems. For this purpose, bi-layer memristive devices with switching mechanisms based on interface effects will be developed. For this purpose, two lines of development will be pursued: (1) thin metal oxide layers (MOx) and (2) transition metal dichalcogenides (TMDC). In both concepts these layers border on an ultra-thin solid state ion reservoir (SSIR). The aim is to integrate application specific devices into CMOS back-end processes and to gain a detailed understanding of the switching mechanism.