Next CRC-colloquium on January 23, 2025: Diederik Depla (Ghent University, Belgium)
Quantifying Reactive Magnetron Sputter Deposition
Prof. Dr. Diederik Depla
Department of Solid State Sciences, Ghent University, Belgium
Conceptually, reactive magnetron sputter deposition appears quite simple and can be summarized succinctly. However, beneath this apparent simplicity lies a complex interplay of physical and chemical processes. Over the last two decades, a detailed model has been developed to describe these processes. The success of this model stems from the ability to quantify the key parameters required as input.
The presentation will begin by describing the primary observations resulting from the addition of a reactive gas to the gas discharge. Dedicated experiments will be discussed, which provide deeper insights into these observations and yield the quantitative input data needed for the developed model. In the second part of the talk, the requirements and intricacies of the model will be explored in detail.
Finally, the link between a fundamental understanding of reactive sputtering and film deposition will be illustrated through three examples, highlighting the importance of a quantitative approach. First, a longstanding challenge in reactive magnetron sputtering is the accurate prediction of the deposition rate, which is largely determined by the partial metal sputtering yield from the oxide layer formed on the target surface during poisoning. Secondly, although it has been known for several decades that negative oxygen ions can strongly influence the final film properties, only recently have we been able to quantify the negative ion yield. Lastly, feedback control in reactive sputtering will be discussed, emphasizing how the stabilization point depends on the access route taken to reach it.
CRC 1461: Neurotronics
Colloquium: 23-January-2024_33, Thursday, 01:30 pm to 03:00 pm (CET)
The colloquium will start at 02:00 pm (!!)
Invited by Jan Trieschmann
Kiel University, Faculty of Engineering, Theoretical Electrical Engineering