Group C1

Memristive devices and materials

The goal of project C1 is to develop innovative materials and concepts for memristive devices and their integration into neuromorphic systems. For this purpose, bi-layer memristive devices with switching mechanisms based on interface effects will be developed. For this purpose, two lines of development will be pursued: (1) thin metal oxide layers (MOx) and (2) transition metal dichalcogenides (TMDC). In both concepts these layers border on an ultra-thin solid state ion reservoir (SSIR). The aim is to integrate application specific devices into CMOS back-end processes and to gain a detailed understanding of the switching mechanism.

News

CRC-colloquium on May 25, 2023: Suhas Kumar (Sandia National Laboratories, CA, USA): Video is online!

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Issue 14 of the quarterly CRC-Newsletter is now available (incl. IMNeuS23 in Münster)!

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New publication in Nature Electronics

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