Group C4

Multiscale analyses of structural, electronic, and chemical mechanisms in memristive devices

The microscopic properties and switching dynamics of interface-based memristive devices will be comprehensively determined toward fundamental understanding and improvement of their function. To this end, the two complementary cutting-edge methods Transmission Electron Microscopy and synchrotron-based Photoelectron Spectroscopy will be combined in multiscale and in operando analyses of structural, electronic, and chemical characteristics. The focus is on metal-oxide and transition-metal dichalcogenide-based memristive devices as well as particle systems and piezo field-effect transistors.

News

CRC-colloquium on May 25, 2023: Suhas Kumar (Sandia National Laboratories, CA, USA): Video is online!

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Issue 14 of the quarterly CRC-Newsletter is now available (incl. IMNeuS23 in Münster)!

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New publication in Nature Electronics

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