Group C4

Multiscale analyses of structural, electronic, and chemical mechanisms in memristive devices

The microscopic properties and switching dynamics of interface-based memristive devices will be comprehensively determined toward fundamental understanding and improvement of their function. To this end, the two complementary cutting-edge methods Transmission Electron Microscopy and synchrotron-based Photoelectron Spectroscopy will be combined in multiscale and in operando analyses of structural, electronic, and chemical characteristics. The focus is on metal-oxide and transition-metal dichalcogenide-based memristive devices as well as particle systems and piezo field-effect transistors.

News

Next CRC-colloquium (hybrid!) on Feb. 12, 2024: Petro Feketa (Victoria University of Wellington, NZ)

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Science News: Towards energy-efficient brain-like computers

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Merry Christmas, happy holidays and all the best for 2024 to all members and friends of the CRC 1461! (Kopie)

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