Group C5

Multiscale Transport Modeling: From Process Plasmas to Resistive Switching Devices

Consistent models on different time and length scales are developed and implemented, which enable a continuous simulation from the processing of memristive devices to their electrical properties. The coupling of the different physical models is realized by a machine learning regression model. In addition to contributing to the fundamental understanding of physics on the different time and length scales, the project will provide suggestions for application-oriented processing and selection of memristive devices for neuromorphic circuits within the CRC.

C5

Project Management
Prof. Dr. Thomas MussenbrockDr. Jan Trieschmann
Post-Docs
Tobias Gergs
Doctoral Researchers
Torben Hemke

News

Science News: Tiny memory cell withstands extreme temperatures

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Next CRC-colloquium on Oct. 26, 2023: Claudia Tortiglione (NRC, Italy)

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Visit the CRC 1461 at the AI-experience day in Lübeck (Nov. 8, 2023)

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